Abstract
AbstractSelf‐assembled InAs/GaAs quantum dot structures have been investigated in both conventional and Laplace‐transform deep‐level transient spectroscopy (DLTS) experiments. Laplace DLTS technique provides orders of magnitude better energy resolution than conventional DLTS and hence enables us to study the electronic fine structure of the deep level states that are revealed using the conventional DLTS method. Two well‐separated peaks corresponding to excitation energies of 468 meV and 485 meV are determined in the quantum dot sample, which have energy broadenings of 13.7 meV and 22.9 meV, respectively. A fine structure is also observed in the reference sample, but the ratio between the two peaks differs and the energy broadening is too narrow to be resolved even by the Laplace DLTS. The strain relaxation due to the QD formation is proposed to explain our observations. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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