All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

Abstract

A vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistor featuring a planar-gate architecture is presented. The device was fabricated by an all-ion-implanted process without requiring trench etching or epitaxial regrowth. A Mg-ion-implanted current blocking layer (CBL) provided electrical isolation between the source and the drain except at an aperture opening through which drain current was conducted. Successful transistor action was realized by gating a Si-ion-implanted channel above the CBL. Thermal diffusion of Mg induced a large source–drain leakage current through the CBL, which resulted in compromised off-state device characteristics as well as a reduced peak extrinsic transconductance compared with the results of simulations.