Abstract
Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) due to ideal, dangling bond free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mV dec−1 of the Boltzmann limit is still challenging. In this work, we demonstrate all 2D type III n-MOS 2 /p+-MoS 2 heterostructure TFETs with low SS values at RT.
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