Abstract
A photodetector heterostructure based on AlInSb / InSb grown by molecular beam epitaxy was presented. Mesastructures of various diameters were fabricated and the temperature dependence of the dark current was measured. It was shown that the built-in barrier blocks the flow of the main charge carriers, thereby reducing the dark current density, in comparison with the pin structure based on InSb. By measuring the dependence of the dark current on the size of the mesastructure, it was shown that the bulk component of the current prevails over the surface component.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
