Abstract
AbstractAl1–xInxN ternary alloys with solid phase indium compositions between x = 0.15 and 0.28 have been grown by metalorganic chemical vapor deposition under indium rich conditions. Within the growth temperature range of 750‐810 °C the indium incorporation into the solid is increasingly reduced by a competing process with thermal activation energy of 1.07 eV. Using this growth scheme, smooth epitaxial layers with root mean‐squares surfaces roughness of 0.3‐0.8 nm are obtained. Extrinsic origin is suggested for the low temperature photoluminescence peak associated with these layers. (Al,In)N films lattice‐matched to GaN have been introduced into laser diode structures for optical confinement. Optical gain is observed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
