Abstract
Al x In y Ga 1− x− y N epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures from 800 to 870°C. The incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of Al remains nearly constant. The optical properties of the samples have been investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL) at different temperatures. The results show that the sample grown at 820°C exhibits the best optical quality for its large PL intensity and the absence of the yellow luminescence. Furthermore the temperature-dependent PL and TRPL of the sample reveals its less exciton localization effect caused by alloy fluctuations. In the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820°C, in good agreement with the PL results. The improvement of Al x In y Ga 1− x− y N quality is well correlated with the incorporation of indium into AlGaN and the possible mechanism is discussed.
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