AlGaN/GaN field effect Schottky barrier diode (FESBD)

Abstract

We demonstrate a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure to obtain a low on-voltage. The vertical and planar FESBDs were tried. A vertical AlGaN/GaN heterostructure was regrown by a selective area growth (SAG) technique using a metalorganic chemical vapor deposition (MOCVD). The contact layer was also grown using an SAG technique. Dual Schottky structures were fabricated to obtain a low on-voltage. That is, Al/Ti was used for a low Schottky barrier metal and Pt used for a higher barrier metal. The on-voltage of the diode was below 0.1 V. By the pinch-off effect of a higher Schottky barrier electrode, the reverse breakdown voltage was over 400 V although the Al/Ti used for a low Schottky barrier metal showed an ohmic property. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)