Abstract
A study of the effect of the insertion of a thin AlN exclusion layer between the AlGaN and GaN buffer layer in microwave hetero-junction field effect transistor structures grown by MOVPE on sapphire and SI-SiC substrates is presented. A dramatic improvement in carrier drift mobility is observed and we present evidence from CV analysis that this improvement is associated with reduced penetration of the 2D electron gas into the AlGaN. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
