Abstract
The micro lighting-emitting diode (Micro-LED) array devices have attracted attention due to increasing demand in augmented reality (AR), virtual reality (VR), LIFI light source, and other micro-display applications. However, with the decrease of micro-LED diameter, the performance of micro-LED is severely limited due to the size effect. In the work, the AlGaInP based red micro-LED with diameter ranging from 2 to 16 μm was prepared to study the size effect of micro-LED array, the array with larger micro-LED diameter show higher external quantum efficiency (EQE), meanwhile, the carrier lifetime decrease with the decreasing of the diameter, which can be explained by more surface states in the micro-LED with smaller diameter. The enhancement of EQE by 2 times has been achieved after surface passivation in (NH 4 ) 2 S x solution. • Micro-LED diameter ranging from 2 to 16 μm was fabricated, and the influence of size effect on the photoelectric performance was studied. • A fast and low-cost surface passivation method was used to successfully reduce the surface state density, and increase EQE of the Micro-LED array by 2 times. • The cause of size effect is clearly explained and the device performance is successfully optimized through surface passivation, which provides valuable guidance for the future commercialization of micro-LED.
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