ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

Abstract

AbstractThin films of gallium oxide (Ga2O3) are prepared by using a new gallium precursor, dimethylgallium isopropoxide (DMGIP), employing both atomic layer deposition (ALD) and metal‐organic (MO)CVD. The gallium precursor DMGIP, a gallium analogue of dimethylaluminum isopropoxide (DMAIP) that has been successfully used for MOCVD and ALD of aluminum oxide, is likewise a non‐pyrophoric liquid at room temperature with a reasonably high vapor pressure. Using water as the oxygen source, DMGIP shows an ALD temperature window in the range 280–300 °C with a growth rate of ∼0.3 Å per cycle. On the other hand, using oxygen as the reactant gas in the MOCVD of Ga2O3, films are grown in the temperature range 450–625°C with the apparent activation energy of 225.5 kJ mol−1. This study shows that DMGIP can be utilized as a new source for the preparation of Ga2O3 thin films.