Abstract
Al/p-CuInSe2 Schottky contacts have been fabricated by vacuum-depositing Al onto Bridgman-grown p-CuInSe2 single crystals. The barrier heights from the temperature-dependent forward I-V characteristics are significantly less than the C−2-V intercepts. This is evidence of the presence of an interfacial layer and surface states in equilibrium with p-CuInSe2. The barrier height, electron affinity, effective acceptor density, and relative Fermi potential as well as diffusion potential were estimated. The surface-state density of the minimum order of 1012 cm−2 eV−1 was obtained for the etched CuInSe2 surface. The transverse doping profile was qualitatively determined.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call