Abstract
A $\mathbf{K}_{a}$ -band power amplifier covering 37–40 GHz band with a low-loss built-in linearizer has been implemented through $\pmb{0.1}\pmb\mu \mathbf{m}$ GaAs pHEMT technology. The proposed phase compensation linearizer can enhance the linearity of the power amplifier with a low insertion loss, a compact die-size, and zero dc consumption. These advantages make the linearizer more suitable for 5G phased array applications. The experimental results show that the power amplifier achieves 1-dB compression point (P1dB) of 17.5 dBm and the power-added efficiency (PAE) at P1dB of 17%. When the proposed power amplifier is tested with OFDM 64-QAM 500MHz bandwidth signal, the obtained − 25 dBc error vector magnitude (EVM) compliant output power and PAE are 13.7 dBm and 7.4 %, respectively.
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