Abstract
This paper demonstrates a fully integrated power amplifier for long term evolution (LTE) applications. The power amplifier is adopting a tuning capacitor in parallel with the choke inductor, which reduces the DC power consumption of the inductor and decreases the chip size. The total power added efficiency (PAE) is enhanced as a result. The proposed power amplifier is manufactured using a 0.25 μm SiGe hetero-junction bipolar transistor (HBT) process. For a LTE signal with a centre frequency of 2.1 GHz, the PA delivers an output power of 21.3 dBm with the power added efficiency (PAE) of 21% and power gain of 19.5 dB at the 1 dB compression point. For the LTE downlink quadrature amplitude modulation (QAM64) signal at 2.11 GHz with 20 MHz channel bandwidth, the measured ACLR is below -30 dBc for the output power of 18 dBm with PAE above 15%. The error vector magnitude (EVM) specifications are met for LTE 20 MHz bandwidth QPSK modulation scheme, and complied with 1 dB power back-off for QAM16 signal and at 2 dB power back-off for QAM64 modulation scheme. The measurement results verify that the proposed method is promising for the application of the fully integrated PA.
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