Abstract
Related to the dramatically smaller volume of microelectromecanical systems (MEMS), new methods in testing and qualification are needed. In single crystal silicon (SCSi) based devices, stress and loading in operation introduces defects during the MEMS life time and increases the risk of failure. Reliability studies on potential failure sources have an impact on MEMS design and are essential to assure the long term functioning of the device. In this paper, a comprehensive approach is proposed for assessing the resistance of SCSi structures under conditions of accelerated aging. Defects introduced by DRIE, thermal annealing, dicing and bonding and also the device environment (radiations, temperature) influence the crystalline perfection and have a direct impact on the mechanical properties of MEMS and their aging behavior. Defects and deformations are analyzed using High Resolution X-ray Diffraction Methods (HRXRD) and supporting simulations are done by Finite Element Method (FEM). MEMS reliability is assessed. Preliminary results indicate a decrease in lifetime and strength of SCSi devices with defect density enhanced by irradiation.
Published Version
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