Abstract
Recently, metal surface plasma technology has been widely used to improve the quantum efficiency of optoelectronic devices, such as ZnO light-emitting diodes (LEDs). In this work, Ag films with the appropriate thickness were prepared by evaporation and annealed, and a layer of ZnCdO films with different Cd concentrations was grown on the Ag films by the pulsed laser deposition method. During this process, the changes in the Cd concentrations caused the near-band edge (NBE) emission of the ZnCdO films to be continuously adjusted in the ultraviolet to green wavelength range by controlling the oxygen pressure. The prepared Ag nanoparticles and ZnCdO composite films were used to study the metal localized surface plasmon (LSP) effect. The results show that the enhanced or reduced photoluminescence intensity of ZnCdO NBE depends on the probability of electrons transport to either the LSP level or the Fermi level of the metal. This discovery provides an important theoretical basis for the preparation of ZnCdO semiconductor LEDs in the future.
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