Abstract
Epitaxial films of gallium-doped zinc oxide (GZO) have been deposited on sapphire (0 0 0 1) substrates by pulsed laser deposition method. X-ray diffraction, photoluminescence (PL) and spectroscopic ellipsometry (SE) were used to characterize the films. It was found that the epitaxial growth of GZO films could be obtained for a substrate temperature at 400°C and the high quality epitaxial films were obtained at 500°C. The PL spectra of epitaxial GZO films showed a near band edge (NBE) emission peak and a broad orange deep-level emission peak. The NBE emission had a blue shift while the deep-level emission shifted to lower energy comparing with those of pure ZnO films. The refractive indices were obtained from the fitting of the SE data by Sellmeier dispersion relation.
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