Abstract
AACVD ZnO film growth as a function of doping concentration.
Highlights
The energy required for the heating and cooling of modern buildings accounts for around 40% of global energy consumption and 30% of all carbon dioxide emissions.[1,2] These numbers will continue to grow as increasingly larger areas of the world become developed and greater numbers of buildings are constructed.[3]
The intensity of the Ga 2p3/2 signal is monotonically enhanced with an increase of gallium dopant content, indicating a progressive enhancement of Ga content in the obtained systems
The main peak is centred at 530.1 eV, in agreement with the position expected for O in ZnO lattice.[43]
Summary
The energy required for the heating and cooling of modern buildings accounts for around 40% of global energy consumption and 30% of all carbon dioxide emissions.[1,2] These numbers will continue to grow as increasingly larger areas of the world become developed and greater numbers of buildings are constructed.[3]. The usage of Transparent conducting oxides (TCO) with a large enough band gap to transmit the visible spectrum of light and with a high charge carrier concentration to re ect infrared radiation. Paper can be used as low-E coatings.[8,12] One typical example is Pilkington K-glass, where a thin uorine-doped tin oxide (FTO) coating is deposited on a glass surface by an atmospheric pressure chemical vapour deposition (CVD) process.[13] In recent years, wide-band-gap zinc oxide has been investigated as new energy efficient coating because it is cheap, biocompatible, chemically stable and easy to fabricate.[14,15,16] The intrinsic ZnO, has a low electron concentration of 1018 to 1019 cmÀ3 Among group-III elements (such as Al, Ga and In), common n-type dopants in ZnO, gallium is regarded as a better choice because its ionic and covalent radii (0.62, 1.26 A) is closer to those of zinc (0.74, 1.31 A) than to those of aluminium (0.5, 1.26 A) or indium (0.81, 1.44 A), so the lattice distortion under a high doping input can be minimized.[18,19,20] In addition, Ga is relatively oxidation resistant, so the formation of non-conductive gallium oxide in ZnO can be suppressed.[21,22]
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