Abstract
Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.
Highlights
In the neuromorphic system of the human brain, neuromorphic synapses are believed to be responsible for transmitting biological information
Can beformation/rupture applied to explainprocess, the formation of CFsrelationship resulted from physical morphology and the which and havefracture an intensive to ions migration induced by thermal-chemical reaction (Joule heating), which performance and working principle of Resistive random access memory (RRAM) devices
We have provided an overview of RRAM devices with advances including various
Summary
In the neuromorphic system of the human brain, neuromorphic synapses are believed to be responsible for transmitting biological information. As the most typical and exquisite representative of the biological memory system, the human brain can store and process massively biological information with the adjustment of synaptic connection strength (synaptic weight) [1] They provide complicated orthosympathetic space and energy balance [1,2]. Simmons et al reported a resistive switching (RS) characteristic in the memory device with (RS) characteristic in the memory device with the structure of Au/SiO2/Al as early as in 1967, which the structure of Au/SiO2 /Al as early as in 1967, which provided the theoretical and experimental provided the theoretical and experimental foundation of RRAM [7] They demonstrated the new type foundation of RRAM [7].
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