Abstract
A new methodology for inspection of through-silicon via (TSV) process wafers have been developed by utilizing the signal of diffracted light from the wafer, which will be suitable for 3D IC production. Near infrared (NIR) light should be applied for the inspection including defect observation at a large depth with chip-cost economy. Diffraction-based macroscopic inspection with NIR light demonstrates a good potential for in-line defect inspection, because it can detect small shape variations and/or defects by capturing the light as a oneframe image via an image sensor, not a special high-cost image sensor but a general high resolution CCD sensor. Our newly developed TSV inspection system exhibits a high sensitivity to 3D shape variation and a high throughput covering the entire wafer. This new technology should be essential for future
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