Abstract
We report the development, optimization, and testing of an advanced quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from field-dependent Hall and resistivity data. Application to temperature-dependent data for a series of 25 LPE-grown n-type and p-type Hg1−xCdxTe samples confirms that the fully automated procedure yields accurate and reliable results for all classes of samples, and also has greater sensitivity to minority carrier concentrations than previous mixed-conduction analysis methods. The QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor materials and devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
