Abstract
Double-gate (DG-) MOSFETs (DGFETs) have received much attention as promising silicon devices for future VLSI circuits thanks to their high short channel effects immunity. The innovative independent-double-gate four-terminal MOSFET (4T-DGFET) enables a new function of the threshold voltage controllability for the optimal power management. In this article, we present the recent progress in the fabrication processes of the fin-type DGFETs (FinFETs) and the 4T-FinFET with the separated double gates.
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