Admittance spectroscopy of metal–semiconductor interfaces prepared by ionized cluster beam technique

Abstract

Analysis of the Ag/p-Si(1 0 0) metal–semiconductor interface prepared by the ionized cluster beam (ICB) technique using admittance spectroscopy is given. The observed peak in the imaginary part of the complex dielectric function spectra indicates the presence of the interface states at the metal–disordered layer and disordered layer–semiconductor interfaces. The frequency dependence of the zero-bias measured conductance and capacitance of the ICB m/s interface is well described assuming the distribution of electronic states in the semiconductor bandgap, and the frequency response of the conductance is related to the hopping conductivity and the tunnelling current to the interface states.