Abstract
Admittance spectroscopy has been used to measure conduction- and valence-band discontinuities in Si/Si1−xGex heterojunctions (0<x<0.45). Most of the band-gap discontinuity was in the valence band. The measured valence-band offset increased with increasing Ge concentration in the strained Si1−xGex films, and it decreased when the Si1−xGex layers started to relax. These results indicate that admittance spectroscopy can be used to monitor the electronic properties of transistorlike Si/Si1−xGex/Si heterostructures.
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