Abstract
Using internal photoemission of electrons we monitored the composition dependent shift of the valence band in Si1−xGex (0.28<x<0.93) films confined between two layers of SiO2, as prepared by the condensation technique. As referenced to the bottom of the oxide conduction band, the increase in Ge content results in upshift in the valence band top with respect to that of pure silicon. This shift occurs nearly linearly with Ge concentration x and can be approximated as δEv(eV)=(0.55±0.05)x.
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