Abstract
The activation energies, Ea’s, for CoSi and CoSi2 formation were determined using in situ resistance measurements during rapid thermal annealing. Co films were evaporated on undoped polycrystalline Si (poly-Si) and single-crystal Si on sapphire (SOS) substrates. The resistance was monitored for heating rates from 1 to 60 °C/s up to 900 °C. There was significant thermal lag between the samples and thermocouple embedded in the susceptor wafer for heating rates greater than 20 °C/s. The thermal lag was quantified by melting Au-Si, Al-Si, and Ag-Si eutectics, and shown to be consistent with finite element modeling. The Ea’s determined from Kissinger plots for heating rates ≤20 °C/s were 2.09±0.11 and 2.03±0.08 eV for CoSi formation and 2.91±0.22 and 2.81±0.23 eV for CoSi2 formation, for Co/poly-Si and Co/SOS samples, respectively.
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