Activation energy for Ni 2Si and NiSi formation measured over a wide range of ramp rates

Abstract

The activation energies, E a, for Ni 2Si and NiSi formation were determined using in-situ resistance measurements with ramp rates ranging from 0.01 °C s −1 to 100°C s −1. Measurements were performed using both conventional furnace and rapid thermal annealing. Ni films were evaporated on undoped polycrystalline Si and single-crystal Si on sapphire substrates. The E a values determined from Kissinger plots were 1.65 ± 0.07 to 1.68 ± 0.08 eV for Ni 2Si formation and 1.84 ± 0.05 to 1.87 ± 0.06 eV for NiSi formation. These are the first reported measurements of E a values for Ni 2Si and NiSi formation over such a wide range of heating rates (four orders of magnitude) and at such high heating rates. The phase-formation sequence remained the same for the range of heating rates examined.