Year-end Sale % OFF 
Abstract
The activation energies Ea for C49 and C54 TiSi2 formation were determined using in situ resistance measurements during rapid thermal annealing. Ti films were evaporated on undoped polycrystalline Si (poly-Si) and single-crystal Si on sapphire (SOS) substrates. The resistance was monitored for heating rates from 1 to 95 °C/s up to 1000 °C. The Ea’s determined from Kissinger plots were 1.86±0.23 and 1.65±0.31 eV for C49 TiSi2 formation and 3.30±0.16 and 3.67±0.13 eV for C54 TiSi2 formation for Ti/poly-Si and Ti/SOS samples, respectively. These are the first reported measurements of Ea’s for C49 and C54 TiSi2 formation at such high heating rates. The formation sequence remained the same for the range of heating rates examined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
