Abstract
Organic field-effect transistors have been the subject of much recent inquiry due to their unique properties. Here, the authors report an ambipolar vertical organic field-effect transistor, which consists of a capacitor cell vertically stacked with an organic active cell, separated by a thin source electrode. By inserting a nanoscale transition-metal-oxide layer at the source/organic interface, the authors fabricated the organic ambipolar transistors with low working voltage and high current output. The thin transition-metal oxide and partial oxidization metal grains form a unique nanostructure that balances the injection barrier height of two types of carriers at the source/organic contact.
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