Abstract
An improved RF method based on the slope extraction of the total drain–source resistance and total gate charge versus mask gate length from measured S-parameters is presented to extract the effective channel mobility of bulk metal–oxide–semiconductor field-effect transistors (MOSFETs) from 27 to 250 °C. An improved temperature-dependent channel mobility equation is also used to eliminate the high-temperature modeling errors in the conventional equation. Much better agreement with measured electron mobility data from 27 to 250 °C is achieved by using the improved equation rather than the conventional one, verifying the accuracy of the improved equation.
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