Accurate Extraction and Modeling of High-Temperature-Dependent Channel Mobility in Metal–Oxide–Semiconductor Field-Effect Transistors Using Measured S-Parameters

Abstract

An improved RF method based on the slope extraction of the total drain–source resistance and total gate charge versus mask gate length from measured S-parameters is presented to extract the effective channel mobility of bulk metal–oxide–semiconductor field-effect transistors (MOSFETs) from 27 to 250 °C. An improved temperature-dependent channel mobility equation is also used to eliminate the high-temperature modeling errors in the conventional equation. Much better agreement with measured electron mobility data from 27 to 250 °C is achieved by using the improved equation rather than the conventional one, verifying the accuracy of the improved equation.