Abstract
This letter proposes a structured approach for accurate estimation of diode reverse-recovery characteristics using datasheet specifications. Considering a conductance model of a diode, the entire reverse-recovery process is divided into four operating modes. The state equations for each mode are derived taking the circuit nonidealities, viz., device capacitance and parasitic inductances, into account. Analytical expressions for reverse-recovery charge, reverse-recovery time, and diode current are derived and numerically solved to estimate the diode conductance directly from manufacturer's data. An empirical model is proposed to characterize the effects of temperature variation on the diode conductance. Numerical simulation and experimental results are presented for antiparallel diodes of three MOSFETs having different current and voltage ratings and also for a discrete p-n diode at different junction temperatures. The maximum estimation error with the proposed approach is 5.1% for peak reverse-recovery current and less than 8% for reverse-recovery time, peak voltage, and energy loss.
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