Abstract
Aging monitoring for insulated gate bipolar transistors (IGBTs) plays an important role in reliability assessment and lifetime prediction of the power converters. Extracting the aging information online as well as decoupling the influence of the junction temperature is the major challenges. In this paper, the peak voltage across the parasitic inductance between the Kelvin and the power emitter in turn-off transient is proposed as a real-time aging condition indicator. The monotonic dependence between the induced peak voltage and aging is investigated and verified by the experimental results from a dynamic characterization test system. With high sensitivity and low dependency on the junction temperature, the induced peak voltage in the turn-off process is a promising aging sensitive electronical parameter (ASEP).
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