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Abstract
The density (NA) and energy level (EA) of a B acceptor in B-doped p-type diamond epilayers are usually determined from the temperature dependence of hole concentration, p(T), using the Fermi–Dirac distribution function for acceptors, which does not consider the effect of the excited states of the B acceptor. However, in samples whose Fermi levels, EF(T), are located between the valence band maximum (EV) and EA in a measurement temperature range, the obtained NA is much higher than the concentration of B atoms determined by secondary ion mass spectroscopy. Because the B acceptor level in diamond is deep, the effect of the excited states of the B acceptor on p(T) should not be ignored. When EF(T) is between EV and EA, the reasonable NA and EA are obtained by fitting a curve to p(T) using the distribution function including the effect of its excited states.
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