Abstract
The temperature dependence of electron and Hall mobilities in accumulation and inversion layers is presented for silicon-on-sapphire films. The inversion-layer mobilities, as a function of surface carrier density, are also given. It is suggested that the reduced mobility resulting in these layers is due to silicon-oxygen complexes located near the film surface. From the data presented, it is expected that deep-depletion n-channel transistors will have approximately 40% higher effective mobilities than conventional inversion-mode n-channel devices on sapphire.
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