Abstract
Upon oxidation, traces of some metal impurities intentionally introduced are identified qualitatively in p-type silicon (Si) wafers as dark photovoltaic images, using a scanning photon microscope (SPM) based on ac surface photovoltages (SPVs). Metal impurities in the Si bulk act as recombination centers for excess carriers, eventually reducing SPVs at the contaminated region. The SPM was successfully applied to eliminate such deteriorated wafers nondestructively in semiconductor device processing.
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