Abstract
A scanning photon microscope based on ac surface photovoltage imaging was applied for nondestructive observations of surface scratches and surface contaminations by SO42- in 125 mm diameter n-type silicon wafers. The scratches and contaminations create bulky and interface traps, resulting in lower ac surface photovoltages. The ac surface photovoltages attained between 35 through 150 µV have a relationship with the concentration of SO42- analyzed by ion chromatography ranging between 102 and 2×104 ng/wafer, implying that the present method is useful and simple for evaluation of the contaminated level of wafer surfaces in a nondestructive and noncontact manner.
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