Abstract
The effects of postimplantation annealing on the homogeneous depth profiles of epitaxially doped B and Al in 4H–SiC were investigated after the ion implantation of various species. We found a marked decrease in the atomic B concentration close to the surface in epitaxially B-doped layers after the implantation of Al, N, or P ions followed by annealing at 1700 °C. On the other hand, the Al profiles in epitaxially Al-doped layers were preserved after the same processes.
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