Abstract
The effect of post-implantation annealing (PIA) on Al–N isoelectronic trap (IET) formation in silicon has been experimentally investigated to discuss the Al–N IET formation and implantation-induced defect recovery mechanisms. We performed a photoluminescence study, which indicated that self-interstitial clusters and accompanying vacancies are generated in the ion implantation process. It is supposed that Al and N atoms move to the vacancy sites and form stable Al–N pairs in the PIA process. Furthermore, the PIA process recovers self-interstitial clusters while transforming their atomic configuration. The critical temperature for the formation/dissociation of Al–N pairs was found to be 450 °C, with which we describe the process integration for devices utilizing Al–N IET technology.
Highlights
The tunnel field-effect transistor (TFET) is a type of steep-slope transistor that shows promise for achieving a much steeper subthreshold swing (SS) compared to that of conventional metal-oxidesemiconductor FETs and for realizing large-scale-integration (LSI) with low power consumption.[1,2]
The Al-N pair acts as the isoelectronic trap (IET) in Si, and it has been utilized for TFETs.[11]
One is the high-temperature stability of the Al-N IET, which is important from the perspective of thermal budget control in the entire device fabrication process
Summary
The tunnel field-effect transistor (TFET) is a type of steep-slope transistor that shows promise for achieving a much steeper subthreshold swing (SS) compared to that of conventional metal-oxidesemiconductor FETs and for realizing large-scale-integration (LSI) with low power consumption.[1,2]. Takahiro Mori,a Yukinori Morita, and Takashi Matsukawa Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan (Received 26 March 2018; accepted 14 May 2018; published online 22 May 2018) PIA processes to form Al–N IETs in silicon from the perspectives of Al–N IET formation and defect generation by utilizing photoluminescence (PL) measurements.
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