Abstract
We investigated the abnormal degradation of high-voltage p-type MOSFET (HV pMOSFET) under negative AC gate bias stress. In HV pMOSFET with n+ polycrystalline silicon (poly-Si) gate, the abnormal degradation occurs after the gradual degradation during negative AC stress. The abnormal degradation is suppressed by changing the gate material from n+ poly-Si to p+ poly-Si, and it is caused by hot holes produced by the impact ionization near the surface when electrons move from the gate toward the gate oxide. We suggest a possible mechanism to explain the improvement of degradation by using p+ poly-Si as a gate material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
