Abstract
The energies of various atomic processes in resistive random access memories (RRAM) are calculated for four typical oxides, HfO2, TiO2, Ta2O5 and Al2O3, to define a materials selection process. Oxygen vacancies have the lowest defect formation energy in the O-poor limit, and to dominate the processes. A band diagram defines the operating ranges of Fermi energy and O chemical potential. It is shown how scavenger metals can be used to vary the O chemical potential and thus vary the O vacancy formation energy. The high stability of amorphous phase of Ta2O5 is relevant to the high endurance of its RRAM.
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