Abstract

A wideband low noise amplifier (LNA) operating within 7.5-29.5 GHz with constant NF variation is presented. Different with conventional noise matching method aiming to realize noise matching across the whole wide bandwidth, the noise matching is only implemented at high frequencies and thus very flat NF is achieved in this work. To further improve noise performance, the multistage noise matching technique is adopted and demonstrated. In addition, to boost the gain and save the power consumption, the CMOS transistor pair is adopted to enhance the transconductance. According to post-layout simulations, the LNA shows the maximum power gain of 15.4 dB, and the noise Figure (NF) ranging from 3.3 to 3.4 dB. The input third-order intercept point (IIP3) is -3.8 dBm at 15 GHz. Implemented in TSMC’s 65-nm CMOS process, the LNA die (including pads) occupies an area of 0.31 mm2.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.