Abstract

Monolithic amplifiers at 90 GHz have been fabricated using 75- mu m GaAs MESFET and pseudomorphic high-electron mobility transistor (PHEMT) devices. The below 0.2- mu m gate-length PHEMT devices have demonstrated an F/sub t/ of 100 GHz and an F/sub max/ of 200 GHz. Monolithic MESFET and PHEMT single-stage amplifiers have achieved 3.5-dB and 7-dB gain, respectively, at 90 GHz. >

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