Characteristic research on an accelerated sensor based on GaAs/AlGaAs/InGaAs PHEMT

Abstract

A novel nano electro mechanical system (NEMS) accelerated sensor which is based on a Pseudomorphic high electron mobility transistor (PHEMT) device with GaAs/AlGaAs/InGaAs is fabricated and demonstrated in this paper. The characteristics, including sensitivity and linearity of the studied device with different drain and gate bias voltage of PHEMT device, are measured and studied. Measured by the testing circuit, the accelerated sensor has good linearity and sensitivity when the PHEMT device works in the linear region and saturation region. The impacts of drain and gate voltages on the drain current has been discussed. The relationship between sensitivity and drain, gate bias voltage is analyzed. The new structure has high sensitivity and good linearity with different bias voltages.