Abstract
This paper presents parametric analysis for low noise High Electron Mobility Transistor (HEMT) devices suitable for mm-wave radar, satellite communication and radiometric applications. Preliminary computations reveal that pseudomorphic HEMT devices using InGaAs/GaAs heterojunction structures offer significant improvements in power added efficiency, noise figure, gain, reliability, and input power requirements compared to standard HEMT's. A Pseudomorphic HEMT device is capable of providing a room temperature noise figure of 3.5dB and small signal gain of 8dB at 95 GHz, approximately.
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