Abstract
In this paper we demonstrate for the first time, how vertical Hall devices manufactured in CMOS technology attain sensitivities comparable to those of conventional silicon plate-shape devices without any additional etching step. This was achieved by taking advantage of the low doping levels of a high-voltage technology. An additional unconventional doping reduction method can further improve the sensitivity. The current related sensitivity of the presented devices varies from 18 V/AT up to 127 V/AT for different sensor geometry and doping concentrations. The linearity error is less than 0.04% for magnetic fields up to 2T.
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