Abstract
An IC process with a wide range of devices up to 1200 V is described. In addition to low-voltage bipolars and CMOS and 230-V VDMOS it provides 700-V high-side LDMOS, HV-PMOS (EPMOS) and low-voltage circuitry, low-side 1200-V LDMOS and 700-V LIGBT (lateral insulated-gate bipolar transistor), as well as 700-V interconnection. These features have been realized by using a substrate of higher resistance in a 250-300-V IC process and by adaptation in the Resurf structure for lateral DMOS. Application examples for flyback and half-bridge power conversion and as a power-bridge driver are given. >
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