Abstract
The system aspects and packaging of a two-stage FM IMPATT-diode amplifier are described. The amplifier combines the output power of 4 IMPATT diodes in the final stage to provide an output power of greater than 4 W at 6 GHz. The system has a locking bandwidth of greater than 200 MHz with a 16-dB gain and a noise figure of less than 50 dB. Both the design and the experimental performance of the amplifier and each of its stages are discussed. The noise characterization of IMPATT-diode amplifiers, operating as injection-locked oscillators or stable amplifiers, determined the mode of operation for each stage. Included in the paper are experimental results of large-signal noise characterization of both Si and GaAs IMPATT diodes, as are the noise characteristics related to the output power and gain.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
