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Abstract
This chapter begins with a discussion on IMPATT diode principles followed by a review of IMPATT diode fabrication, commercial IMPATT diode specifications, IMPATT diode amplifier design, IMPATT diode oscillator design, and the noise characteristics of IMPATT diode oscillators and amplifiers. IMPATT diode manufacturers use various specifications to describe IMPATT performance. The chapter summarizes IMPATT diode specifications for some commercial devices produced by several of the major diode manufacturers including primarily millimeter-wave devices. A summary of IMPATT specifications for some commercial devices designed for pulsed operation is also presented here. The chapter also offers some understanding regarding IMPATT diode amplifier design. The negative resistance associated with a DC-biased IMPATT is commonly used in the design of one-port reflection amplifiers for high-power millimeter-wave applications. The chapter also exemplifies IMPATT diode oscillator design. IMPATT diodes also find common use as the active element in high-power microwave and millimeter-wave oscillators. The design of these circuits closely parallels that of IMPATT-based reflection amplifier.
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