Abstract

The design of Q band IMPATT diode cavity combiners is discussed. The design is based on a three-step closed form algorithm. The first step is the characterization of the passive circuit (cavity and diode package) using an automatic network analyzer. In the second step, a computer program is used to generate diode device lines. The third step is the load line synthesis for predictable operation as either an injection-locked oscillator or a stable negative resistance amplifier. These procedures were used to design a three-diode, two-stage amplifier using 2-watt, 44-GHz GaAs IMPATT diodes. An output power of 3 watts with 11 dB gain was achieved.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.