A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile

Abstract

An analytical two-dimensional (2D) model for the surface potential distribution and subthreshold current of the Double-Gate (DG) MOSFETs having Gaussian-like doping profile in the vertical direction of the silicon channel has been presented in this paper. The model is based on the solution of the 2D Poisson's equation in the fully depleted channel region using evanescent method. The effect of doping profile parameters on the surface potential has also been presented. The potential distribution function has been utilized to investigate the subthreshold current characteristics of the device. The validity of the proposed model is shown by comparing the analytical results with the simulation data obtained by the 2D device simulator ATLAS™. The proposed model is considered to be a very accurate and compact one since it does not include any fitting parameter.