Two-dimensional analytical sub-threshold model of Double Gate MOSFET with gate stack

Abstract

A two-dimensional (2-D) analytical solution of electrostatic potential is derived for lightly doped Double Gate (DG) MOSFET in the sub-threshold region by solving Poissonpsilas equation using the parabolic profile approach. The analytical model evaluates surface potential, threshold voltage, sub-threshold slope and sub-threshold drain current. Further, to improve the gate control and reduce the gate tunneling leakage currents, the device performance of DG MOSFET is investigated by introducing high k-gate dielectric architecture. A two-dimensional (2-D) analytical solution has also been developed for the DG-gate stack MOSFET design and a performance comparison of both the MOSFET designs have been evaluated. Results reveal enhanced device performance in terms of improved gate control, threshold voltage, sub-threshold slope and sub-threshold drain current.